PART |
Description |
Maker |
IDT5993A-5QI IDT5993A-5Q 5993A_DATASHEET IDT5993A- |
From old datasheet system IGBT Module; Continuous Collector Current, Ic:400A; Collector Emitter Saturation Voltage, Vce(sat):1.7V; Power Dissipation, Pd:890W; Collector Emitter Voltage, Vceo:250V; Package/Case:Module; Transistor Polarity:N Channel RoHS Compliant: Yes IGBT Module; Continuous Collector Current, Ic:400A; Collector Emitter Saturation Voltage, Vce(sat):2.8V; Power Dissipation, Pd:1500W; Collector Current:400A; Collector Emitter Voltage, Vceo:600V; Leaded Process Compatible:No RoHS Compliant: No IGBT Module; Continuous Collector Current, Ic:30A; Collector Emitter Saturation Voltage, Vce(sat):2.8V; Power Dissipation, Pd:150W; Collector Current:30A; Collector Emitter Voltage, Vceo:600V; Leaded Process Compatible:No RoHS Compliant: No IGBT Module; Continuous Collector Current, Ic:400A; Collector Emitter Saturation Voltage, Vce(sat):2.2V; Power Dissipation, Pd:960W; Collector Emitter Voltage, Vceo:600V; Package/Case:Module; Transistor Polarity:N Channel RoHS Compliant: Yes PROGRAMMABLE SKEW PLL CLOCK DRIVER TURBOCLOCK PLL BASED CLOCK DRIVER, 8 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO28 Scan Test Devices With 18-Bit Universal Bus Transceiver 64-LQFP -40 to 85 可编程相偏PLL时钟驱动器TURBOCLOCK
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IDT[Integrated Device Technology] Integrated Device Technology, Inc.
|
2SB1561-Q |
Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-60V
|
TY Semiconductor Co., Ltd
|
2SC3120 |
Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 15 V
|
TY Semiconductor Co., Ltd
|
2SC3513 |
Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 11 V
|
TY Semiconductor Co., Ltd
|
TLP2301 |
Collector-emitter voltage - 40 V (min)
|
Toshiba Semiconductor
|
2SD814A |
High collector-emitter voltage VCEO Low noise voltage NV
|
TY Semiconductor Co., Ltd
|
PZTA42 PZTA4207 |
NPN Silicon High-Voltage Transistors Low collector-emitter saturation voltage
|
Infineon Technologies AG
|
BC847S KC847S |
Low collector-emitter saturation voltage
|
TY Semiconductor Co., Ltd
|
SMBT2222AE6327HTSA1 |
Low collector-emitter saturation voltage
|
Infineon Technologies AG
|
2SJ621 2SJ621-T2B 2SJ621-T1B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA MOS FIELD EFFECT TRANSISTOR Pch enhancement type MOS FET
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NEC Corp. NEC[NEC]
|